PART |
Description |
Maker |
RJK4513DPE RJK4513DPE-00J3 RJK4513DPE-12 RJK4513DP |
450V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK4502DJE-00Z0 RJK4502DJE-15 |
450V - 2.8A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK4512DPP-E0-15 |
450V - 14A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
APT6035 APT6035AVR |
POWER MOS V 600V 16A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业 Low withstand voltage Nch MOS FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|